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Photolumineszenz-Mapper-NIR - PR1150863-3240-W

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Photoluminescences is a versaille method for characterisation of direct semiconductors. In epitaxy typically whole wafers get PL-mapped to achive information on bandgap, uniformity, layer thickness or cavity dip. The desired tool is capable to measure in a spectral range from 800-2150nm, due to the (AlInGa)(AsP)-heterostructures which are matter of investigations. The setup is capable of mapping entire 2 - 6 inch (50mm - 150mm) wafers. Options: 1. Excitation density tuning for Laser 1 (automized) 2. Laser 2 (DPSS) for InGaAs-contact bleach out for layers with thickness 50 - 200nm 3. Sample holder: Flexible sample positioning on entire chuck with vacuum clamping 4. Sample holder: Mount for DataRay BladeCam2

Status
Open
Deadline
Published
Country
Germany
Funder
Fraunhofer-Gesellschaft, Einkauf B12
Official page
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Source document
https://oeffentlichevergabe.de/api/notice-exports?pubMonth=2026-09
Document fingerprint
5c5df12458115674 (SHA-256, first 16 hex characters)
Collected
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Data source

Source: Datenservice Öffentlicher Einkauf (Bundesministerium für Wirtschaft und Klimaschutz). CC0 1.0 (CC-ZERO) — no conditions.

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